maximum ratings symbol value units collector ? emitter voltage v ceo 35 0 volts collector ? base voltage v cbo 45 0 volts emitter ? base voltage v ebo 7 volts continu ou s collector current i c 1 amps power dissipation @ t c = 25oc power dissipation @ t c = 25oc n ote 1 n ote 2 p d 5 0.7 w operating & storage temperature top & tstg - 65 to +200 oc maximum thermal resistance junction to case junction to ambient r q jc r q ja 7. 5 (typ 5) 250 oc/w note1: d erated 133 mw/c abo ve t c = 162.5c note2: d erated 4 mw/ c above t a = 25c pin 1 = collector; pin 2= emitter; pin 3= base .140 .052 .134 .030 .070 .090 .150 .007 .220 .007 .005 typ .065 .010 1 2 3 solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet smd.22 sft 3439 s .22 1 a / 45 0 volts np n s witching transistor features: switching transistor small f ootprint s ur face m ount d evice with e xcellent t hermal p roperties replacement/enhancement for 2n 3439 ua tx, txv, s - level s creening a vailable pn p c omplimentary p arts a vailable note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet # : tr0 086 a doc
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sft 3439 s .22 electrical characteristic s 4 / symbol min typ max units collector cutoff current v cb = 36 0 v v cb = 450 v v cb = 360 v, t a = 150oc i cbo1 i cbo2 i cbo3 ?? ?? ?? 0.05 0.1 ?? 2 5 100 m a collector cutoff current v ce = 3 00 v i ceo ?? 0.02 2 m a collector cutoff current v ce = 45 0 v, v be = 1.5 v i cex1 ?? ?? 5 m a emitte r cutoff current v eb = 7 .0 v i ebo ?? 0. 01 10 m a v ce = 10 v, i c = 0.2 ma v ce = 10 v, i c = 2 m a v ce = 10 v, i c = 2 0 m a h fe1 h fe2 h fe4 10 30 4 0 65 9 0 115 ?? ?? 160 dc forward current transfer ratio * v ce = 10 v, i c = 20m a, ta= - 55oc h fe 4 1 5 30 ?? collector to emitter saturation voltage i c = 50 m a, i = 4 m a v ce(sat)1 ?? 0.2 3 0.5 v base to emitter saturation voltage i c = 50 ma, i b = 4 ma v be(sat)1 ?? 0. 7 5 1. 3 v frequency transition (sm all signal current gain) @ f= 5 mhz v ce = 10v, i c = 1 0ma, f = 5 mhz h fe 3 5.5 1 5 small signal current gain @ f= 1 khz v ce = 10v, i c = 5ma, f = 1 khz h fe 25 110 ?? output capacitance v cb = 10v, f = 1mhz c obo ?? 8 10 pf input capacitance v be = 5v, f = 1mhz c ibo ?? 35 75 pf pulse r esponse v cc = 200v, i c = 20ma, i b = 2ma t o n t off ?? ?? ?? ?? 1 10 m s safe operating area v ce = 5v, i c = 1a, t = 1 s v ce = 350v, i c = 14 ma, t = 1 s soa1 soa2 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to rel ease. data sheet #: tr0086a doc notes: * pulse test: pulse width = 300 m sec, duty cycle = 2% 1 / for ordering information, price, availability contact factory. 2 / screening per mil - prf - 19500 3 / for package outlines contact factory. 4 / unless otherwise spe cified, all electrical characteristics @25oc.
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